T0900AF65E
IXYS Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 900A I(C), 6500V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CEDB-X3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)5.2
- Terminal PositionEND
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)10600
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)4600
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)6600
- Collector Current-Max (IC) (A)900
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
- Collector-emitter Voltage-Max (V)6500
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T0900AF65E