T0400NA18A
IXYS Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 1800V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CXDB-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- Terminal PositionUNSPECIFIED
- Fall Time-Max (tf)1000 ns
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)1180 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1380 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)400 A
- Power Dissipation-Max (Abs)1800 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7 V
- Collector-emitter Voltage-Max1800 V
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T0400NA18A