SSW2N80A
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)213 mJ
- Drain-source On Resistance-Max6 ohm
- Pulsed Drain Current-Max (IDM)8 A
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SSW2N80A