SSP7360N
SeCoS Corporation
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)11 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)3.5 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.022 ohm
- Pulsed Drain Current-Max (IDM)75 A
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SSP7360N
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SSP7360N