SSP4N60ASJ69Z
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)262 mJ
- Drain-source On Resistance-Max2.5 ohm
- Pulsed Drain Current-Max (IDM)16 A
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