SSM9975GM
SILICON STANDARD CORP
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 7.6A I(D), 60V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)7.6 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)170 pF
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Moisture Sensitivity Level3
- Power Dissipation-Max (Abs)2 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max2 W
- Drain-source On Resistance-Max0.021 ohm
- Pulsed Drain Current-Max (IDM)30 A
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SSM9975GM