SSH10N70
Samsung Semiconductor, Inc.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 10A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)10
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)410
- DS Breakdown Voltage-Min (V)700
- Turn-off Time-Max (toff) (ns)840
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)150
- Avalanche Energy Rating (Eas) (mJ)795
- Pulsed Drain Current-Max (IDM) (A)40
- Drain-source On Resistance-Max (ohm)1.2
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SSH10N70