SSE36N15S-C by SeCoS Corporation | Sourcengine

SeCoS Corporation SSE36N15S-C

Lifecycle status
Active
Description
Power Field-Effect Transistor, 36A I(D), 150V, 0.068ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-220AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
SPLIT GATE TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
113.6
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Feedback Cap-Max (Crss) (pF)
6
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
75
Drain-source On Resistance-Max (ohm)
0.068