SSD04N03
SeCoS Corporation
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 80A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)80 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)435 pF
- DS Breakdown Voltage-Min25 V
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)96 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)140 mJ
- Drain-source On Resistance-Max0.004 ohm
- Pulsed Drain Current-Max (IDM)170 A
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SSD04N03