SQS110ENW-T1_GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SQS110ENW-T1_GE3

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 57A I(D), 100V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
57
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
26
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
26
Turn-off Time-Max (toff) (ns)
45
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
36
Pulsed Drain Current-Max (IDM) (A)
119
Drain-source On Resistance-Max (ohm)
0.0132
Screening Level / Reference Standard
AEC-Q101