SQJA80EP-T1
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 60A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)40
- DS Breakdown Voltage-Min (V)80
- Feedback Cap-Max (Crss) (pF)100
- Turn-off Time-Max (toff) (ns)80
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)61
- Pulsed Drain Current-Max (IDM) (A)120
- Drain-source On Resistance-Max (ohm)0.007
- Screening Level / Reference StandardAEC-Q101
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