SQJ884EP-T1-GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SQJ884EP-T1-GE3

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 32A I(D), 40V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
55
Drain Current-Max (ID) (A)
32
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
80
Pulsed Drain Current-Max (IDM) (A)
128
Drain-source On Resistance-Max (ohm)
0.007
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED