SQJ868EP-T1_BE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SQJ868EP-T1_BE3

Lifecycle status
Active
Description
N-CHANNEL 40-V (D-S) 175C MOSFET
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
48
Drain Current-Max (ID) (A)
58
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
29
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
140
Turn-off Time-Max (toff) (ns)
52
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
61
Pulsed Drain Current-Max (IDM) (A)
230
Drain-source On Resistance-Max (ohm)
0.00735
Screening Level / Reference Standard
AEC-Q101