SQJ403EEP-T1_GE3
Vishay Intertechnology, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET p-channel 30-v (d-s) 175c mosfet
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)30 A
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)125 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0085 ohm
- Pulsed Drain Current-Max (IDM)84 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for SQJ403EEP-T1_GE3
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SQJ403EEP-T1_GE3
Send an RFQ
SQJ403EEP-T1_GE3