SQ3426EV by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SQ3426EV

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 7A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-193AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
5
Drain Current-Max (ID) (A)
7
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
32
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
70
Turn-off Time-Max (toff) (ns)
40
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
5
Pulsed Drain Current-Max (IDM) (A)
29
Drain-source On Resistance-Max (ohm)
0.042
Screening Level / Reference Standard
AEC-Q101