SPF-2000
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-XUUC-N6
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.14 A
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min5.5 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.6 W
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SPF-2000
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SPF-2000