SP721
POLYFET R F DEVICES
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals2
- Power Gain-Min (Gp)10 dB
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)6 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)3.5 pF
- DS Breakdown Voltage-Min36 V
- Operating Temperature-Max200 Cel
- Transistor Element MaterialSILICON
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SP721
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SP721