SNGD21034 by SILICON TRANSISTOR CORP | Sourcengine

SILICON TRANSISTOR CORP SNGD21034

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-258AA
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-258AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
3.7
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
34
Collector-emitter Voltage-Max (V)
1000
Power Dissipation Ambient-Max (W)
125