SNGD20620
SILICON TRANSISTOR CORP
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-254AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- VCEsat-Max (V)2.6
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)20
- Collector-emitter Voltage-Max (V)600
- Power Dissipation Ambient-Max (W)75
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SNGD20620
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SNGD20620