SND410
SILICON TRANSISTOR CORP
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 20A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-T6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements2
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- DS Breakdown Voltage-Min400 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)125 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.2 ohm
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SND410
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SND410