SMN01Z30Q by KODENSHI AUK CORP | Sourcengine

KODENSHI AUK CORP SMN01Z30Q

Lifecycle status
Active
Description
Power Field-Effect Transistor, 1.3A I(D), 300V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2.1
Drain Current-Max (ID) (A)
1.3
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
64
DS Breakdown Voltage-Min (V)
300
Feedback Cap-Max (Crss) (pF)
5
Turn-off Time-Max (toff) (ns)
132
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
182.6
Pulsed Drain Current-Max (IDM) (A)
5.2
Drain-source On Resistance-Max (ohm)
8