SML80A12R1
TT ELECTRONICS PLC
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11.5A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-3
- JESD-609 Codee1
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)11.5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)1210 mJ
- Drain-source On Resistance-Max0.65 ohm
- Pulsed Drain Current-Max (IDM)46 A
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