SMD25N05-45L
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5 A
- Turn-on Time-Max (ton)60 ns
- DS Breakdown Voltage-Min50 V
- Turn-off Time-Max (toff)100 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max50 W
- Drain-source On Resistance-Max0.07 ohm
- Pulsed Drain Current-Max (IDM)100 A
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SMD25N05-45L