SMC6G10US60
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PUFM-T21
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)2.7
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED SWITCHING
- Number of Elements6
- Number of Terminals21
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)36
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)10
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)52
- Collector Current-Max (IC) (A)10
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
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SMC6G10US60