SM2404T-6 by ENHANCED MEMORY SYSTEMS INC | Sourcengine

ENHANCED MEMORY SYSTEMS INC SM2404T-6

Lifecycle status
Discontinued
Description
Cache DRAM, 1MX16, 4.3ns, CMOS, PDSO50
Category
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-PDSO-G50
Memory Width
16
Organization
1MX16
Package Code
TSOP
Self Refresh
YES
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
16777216 bit
Memory IC Type
CACHE DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
2048
Terminal Pitch
0.8 mm
Access Time-Max
4.3 ns
Number of Ports
1
Number of Words
1048576 words
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
280 mA
Number of Functions
1
Number of Terminals
50
Standby Current-Max
0.002 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
1,2,4,8,FP
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
TSOP50,.46,32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
166 MHz