SKM22GD121D
SEMIKRON INTERNATIONAL
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max4 V
- JESD-30 CodeR-PUFM-D17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals17
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)40 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)150 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)22 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max900 W
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SKM22GD121D