SKM200GBD123D1S by SEMIKRON INTERNATIONAL | Sourcengine

SEMIKRON INTERNATIONAL SKM200GBD123D1S

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X9
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1380
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
320
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
670
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED