SKIIP39GA12T4V1
SEMIKRON INTERNATIONAL
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 214A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X43
- ConfigurationCOMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.1
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements3
- Number of Terminals43
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)215
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)470
- Collector Current-Max (IC) (A)214
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardIEC-61340; UL RECOGNIZED
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SKIIP39GA12T4V1