SKIIP38NAB12T4V1 by SEMIKRON INTERNATIONAL | Sourcengine

SEMIKRON INTERNATIONAL SKIIP38NAB12T4V1

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 115A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X68
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.05
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
7
Number of Terminals
68
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
195
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
465
Collector Current-Max (IC) (A)
115
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED