SJMN08A65D by KODENSHI AUK CORP | Sourcengine

KODENSHI AUK CORP SJMN08A65D

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 8A I(D), 650V, 0.57ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
SUPERJUNCTION MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
63
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
9.5
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
230
Pulsed Drain Current-Max (IDM) (A)
24
Drain-source On Resistance-Max (ohm)
0.57
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED