SISA26DN-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionMOSFET N-CH 25V 60A PPAK1212-8S
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-F5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)39
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)64
- DS Breakdown Voltage-Min (V)25
- Feedback Cap-Max (Crss) (pF)105
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)48
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)31.2
- Pulsed Drain Current-Max (IDM) (A)150
- Drain-source On Resistance-Max (ohm)0.00265
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SISA26DN-T1-GE3