SIS426DN-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 20V 35A PPAK1212-8
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-XDSO-C5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)52
- Drain Current-Max (ID) (A)22
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)20
- Pulsed Drain Current-Max (IDM) (A)70
- Drain-source On Resistance-Max (ohm)0.0045
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SIS426DN-T1-GE3