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SIRB40DP-T1-GE3

Vishay Intertechnology, Inc.

SIRB40DP-T1-GE3 Datasheet
Vishay Intertechnology, Inc. SIRB40DP-T1-GE3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-F8
  • Configuration
    Dual N-CH
  • Package Shape
    RECTANGULAR
  • Package Style
    POWERPAK-SO-8
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e3
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    8
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    46.2
  • Drain Current-Max (ID) (A)
    40
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Turn-on Time-Max (ton) (ns)
    248
  • DS Breakdown Voltage-Min (V)
    40
  • Feedback Cap-Max (Crss) (pF)
    102
  • Peak Reflow Temperature (Cel)
    260
  • Turn-off Time-Max (toff) (ns)
    84
  • Operating Temperature-Max (Cel)
    150
  • Operating Temperature-Min (Cel)
    -55
  • Avalanche Energy Rating (Eas) (mJ)
    31.25
  • Pulsed Drain Current-Max (IDM) (A)
    100
  • Drain-source On Resistance-Max (ohm)
    0.00325
  • Time@Peak Reflow Temperature-Max (s)
    30

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SIRB40DP-T1-GE3