SIJH5800E-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionN-CHANNEL 80 V (D-S) 175C MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)333
- Drain Current-Max (ID) (A)302
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)110
- DS Breakdown Voltage-Min (V)80
- Feedback Cap-Max (Crss) (pF)20
- Turn-off Time-Max (toff) (ns)160
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)281
- Pulsed Drain Current-Max (IDM) (A)500
- Drain-source On Resistance-Max (ohm)0.00158
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SIJH5800E-T1-GE3