SIHS36N50D-E3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SIHS36N50D-E3

Lifecycle status
EOL
RoHS
RoHS compliant
REACH
REACH compliant
Description
MOSFET N-CH 500V 36A SUPER-247
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-274AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
332
Pulsed Drain Current-Max (IDM) (A)
112
Drain-source On Resistance-Max (ohm)
0.13
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED