SIHH20N50E-T1-GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SIHH20N50E-T1-GE3

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
MOSFET N-CH 500V 22A PPAK 8 X 8
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PSSO-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
174
Drain Current-Max (ID) (A)
22
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
126
DS Breakdown Voltage-Min (V)
500
Feedback Cap-Max (Crss) (pF)
7
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
183
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
286
Pulsed Drain Current-Max (IDM) (A)
53
Drain-source On Resistance-Max (ohm)
0.147
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED