SIHFBC40ASTR-E3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SIHFBC40ASTR-E3

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
REACH
REACH compliant
Description
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
6.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
570
Pulsed Drain Current-Max (IDM) (A)
25
Drain-source On Resistance-Max (ohm)
1.2
Time@Peak Reflow Temperature-Max (s)
30