SIE816DF-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 60V 60A 10POLARPAK
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XDSO-N4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishPURE MATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)19.8
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)125
- Pulsed Drain Current-Max (IDM) (A)60
- Drain-source On Resistance-Max (ohm)0.0074
0 suppliers available to buy or to bid for SIE816DF-T1-GE3
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SIE816DF-T1-GE3
Send an RFQ
SIE816DF-T1-GE3