SIDR140DP-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N-CH 25V 79A/100A PPAK
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)100
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)260
- DS Breakdown Voltage-Min (V)25
- Feedback Cap-Max (Crss) (pF)510
- Turn-off Time-Max (toff) (ns)144
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)180
- Pulsed Drain Current-Max (IDM) (A)500
- Drain-source On Resistance-Max (ohm)0.0009
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SIDR140DP-T1-GE3