SIA439EDJ-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET P-CH 20V 28A PPAK SC70-6
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)28
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Peak Reflow Temperature (Cel)260
- Avalanche Energy Rating (Eas) (mJ)5.8
- Pulsed Drain Current-Max (IDM) (A)60
- Drain-source On Resistance-Max (ohm)0.018
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SIA439EDJ-T1-GE3