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SIA411DJ-T1-GE3

Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc. SIA411DJ-T1-GE3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    S-XDSO-N3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    P-CHANNEL
  • Power Dissipation-Max (W)
    19
  • Drain Current-Max (ID) (A)
    8.8
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    20
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    150
  • Pulsed Drain Current-Max (IDM) (A)
    20
  • Drain-source On Resistance-Max (ohm)
    0.03
  • Time@Peak Reflow Temperature-Max (s)
    40

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SIA411DJ-T1-GE3
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SIA411DJ-T1-GE3