SI7983DP-T1-GE3
VISHAY SILICONIX
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET 2P-CH 20V 7.7A PPAK SO8
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XDSO-C6
- Configuration2 P-Channel (Dual)
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)7.7
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Pulsed Drain Current-Max (IDM) (A)30
- Drain-source On Resistance-Max (ohm)0.017
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SI7983DP-T1-GE3
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SI7983DP-T1-GE3