SI7947DP-T1-E3
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 8.7A I(D), P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn)
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)3.5
- Drain Current-Max (ID) (A)8.7
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)30
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SI7947DP-T1-E3