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SI7601DN-T1-E3

VISHAY SILICONIX

VISHAY SILICONIX SI7601DN-T1-E3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    S-XDSO-C5
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e3
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    MATTE TIN
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    5
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (ID) (A)
    11.5
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    20
  • Avalanche Energy Rating (Eas) (mJ)
    11.25
  • Pulsed Drain Current-Max (IDM) (A)
    40
  • Drain-source On Resistance-Max (ohm)
    0.0192

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SI7601DN-T1-E3
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SI7601DN-T1-E3