SI6459BDQ-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSmall Signal Field-Effect Transistor, 2.2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)2.2 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)1.5 W
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SI6459BDQ-T1-GE3
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SI6459BDQ-T1-GE3