SI5905BDC-T1-GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SI5905BDC-T1-GE3

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Small Signal Field-Effect Transistor, 4A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-C8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
PURE MATTE TIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
3.1
Drain Current-Max (ID) (A)
4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
8
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.08