SI5515DC-T1
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 4.4A I(D), 20V, 0.04ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XDSO-C8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID) (A)4.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Drain-source On Resistance-Max (ohm)0.04
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SI5515DC-T1