SI5513CDC-T1-GE3
VISHAY SILICONIX
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionMOSFET N/P-CH 20V 4A/3.7A 1206-8
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-C8
- ConfigurationN and P-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishPURE MATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID) (A)4
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.055
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SI5513CDC-T1-GE3