SI4953DY-T1 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SI4953DY-T1

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
4.9
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
35
DS Breakdown Voltage-Min (V)
30
Turn-off Time-Max (toff) (ns)
65
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.053