SI4850EY-T1-GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SI4850EY-T1-GE3

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.7
Drain Current-Max (ID) (A)
6
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
40
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
74
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
11
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.022
Screening Level / Reference Standard
IEC-61249-2-21
Time@Peak Reflow Temperature-Max (s)
30